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Ordering number : ENA0360A
2SK2618ALS
SANYO Semiconductors
DATA SHEET
2SK2618ALS
Features
* * * *
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Low Qg. Ultrahigh-speed switching. Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *3 Avalanche Current *4 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature SANYO's ideal heat dissipation condition PW10s, duty cycle1% Tc=25C (SANYO's ideal heat dissipation condition) Conditions Ratings 500 30 6.5 5.6 20 2.0 30 150 --55 to +150 138 5 Unit V V A A A W W C C mJ A
*1 Shows chip capability *2 Package limited *3 VDD=50V, L=10mH, IAV=5A *4 L10mH, single pulse Marking : K2618
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22107 TI IM TC-00000528 / 72006QB MS IM TC-00000027 No. A0360-1/4
2SK2618ALS
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD Conditions ID=1mA, VGS=0V VDS=500V, VGS=0V VGS=30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, VGS=10V, ID=5A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=5A, VGS=0V Ratings min 500 1.0 100 3.5 1.5 3.0 0.95 700 250 120 20 20 20 50 25 1.2 1.25 5.5 typ max Unit V mA nA V S pF pF pF nC ns ns ns ns V
Package Dimensions
unit : mm (typ) 7509-002
Switching Time Test Circuit
VDD=200V
10.0 3.2 4.5 2.8
PW=1s D.C.0.5% VGS=15V
3.5
ID=3A RL=66.7
7.2
16.1
16.0
D
VOUT
0.6
G
P.G RGS=50 2SK2618ALS
0.9 1.2 0.75
3.6
1.2
14.0
S
0.7
123
2.4
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
2.55
2.55
Avalanche Resistance Test Circuit
L 50 RG
2SK2618ALS 15V 0V 50 VDD
No. A0360-2/4
2SK2618ALS
7
ID -- VDS
10V
15V
8V
7
ID -- VGS
VDS=10V Tc=25C
6
6
Drain Current, ID -- A
5
Drain Current, ID -- A
10
5
4
4
3
3
7V
2
2
1
1
VGS=6V
0 0 2 4 6 8 0 0 5 10 15 20 IT04787
Drain-to-Source Voltage, VDS -- V
2.5
IT04786 7
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
yfs -- ID
Forward Transfer Admittance, yfs -- S
Static Drain-to-Source On-State Resistance, RDS(on) --
Tc=25C ID=3A
2.0
5
VDS=10V Tc=25C
3 2
1.5
1.0 7 5
1.0
3 2 0.1
0.5 4 6 8 10 12 14 16 18 20
2
3
5
7
1.0
2
3
5
Gate-to-Source Voltage, VGS -- V
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IT04788 2
IS -- VSD
Ciss, Coss, Crss -- VDS
f=1MHz
Drain Current, ID -- A
7 10 IT04789
VGS=0V Tc=25C
1000
Source Current, IS -- A
Ciss, Coss, Crss -- pF
7 5
Ciss
3 2
Coss
Crss
100 7 5
0.01 7 5 3 2 0.001 0 0.3 0.6 0.9 1.2 1.5 IT04790
0
5
10
15
20
25
30 IT04791
Diode Forward Voltage, VSD -- V
100
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
ASO
Switching Time, SW Time -- ns
7
VDD=200V VGS=15V
IDP=20A IDc(*1)=6.5A IDpack(*2)=5.6A
10 0
td (off)
Drain Current, ID -- A
5
PW10s 10 s
s
1m
3
tf
2
td(on)
tr
1 10 0ms 0m s DC op Operation in this era tio area is limited by RDS(on). n
s
10 7 5 7 1.0 2 3 5 7
Drain Current, ID -- A
10 IT04792
0.01 1.0
Tc=25C Single pulse
2 3
*1. Shows chip capability *2. SANYO's ideal heat dissipation condition
2 3 5 7 100 2 3 5 7 1000 IT10848
5 7 10
Drain-to-Source Voltage, VDS -- V
No. A0360-3/4
2SK2618ALS
2.5
PD -- Ta
Allowable Power Dissipation, PD -- W
35
PD -- Tc
Allowable Power Dissipation, PD -- W
30
2.0
25
1.5
20
1.0
15
10
0.5
5 0
0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
120
IT03660
Case Temperature, Tc -- C
IT03659
EAS -- Ta
Avalanche Energy derating factor -- %
100
80
60
40
20
0 0 25 50 75 100 125 150 175 IT10478
Ambient Temperature, Ta -- C
Note on usage : Since the 2SK2618ALS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice.
PS No. A0360-4/4

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